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Beilstein Journal of Nanotechnology (1)
Organic Electronics (1)
Lorbek, Stefan (2)
Ausserlechner, Simon J. (1)
Brandner, Hannes (1)
George, Antony (1)
Hlawacek, Gregor (1)
Mocking, Tijs F (1)
Neuhold, Alfred (1)
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Poelsema, Bene (1)
Resel, Roland (1)
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Zandvliet, Harold J W (1)
Zojer, Egbert (1)
van Gastel, Raoul (1)
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X-ray based tools for the investigation of buried interfaces in organic electronic devices
Ausserlechner, Simon J.
► We fabricated orthogonal soluble polymer stacks and probed the buried interface by X-ray reflectivity. ► Depending on the used solvent of the organic semiconducting material the interface morphology changed significantly. ► Grazing incidence X-ray diffraction exhibits the molecule alignment in the investigated polymer stack. ► The buried interface roughness within the polymer stack was correlated to the OTFT performance containing the stack.
X-ray reflectivity combined with grazing incidence diffraction is a valuable tool for investigating organic multilayer structures that can be used in devices. We focus on a bilayer stack consisting of two materials (poly-(3-hexylthiophene)) (P3HT) and poly-(4-styrenesulfonic acid) (PSSA) spin cast from orthogonal solvents (water in the case of PSSA and chloroform or toluene for P3HT). X-ray reflectivity is used to determine the thickness of all layers as well as the roughness of the organic–organic hetero-interface and the P3HT surface. The surface roughness is found to be consistent with the results of atomic force microscopy measurements. For the roughness of P3HT/PSSA interface, we observe a strong dependence on the solvent used for P3HT deposition. The solvent also strongly impacts the texturing of the P3HT crystallites as revealed by grazing incidence diffraction. When applying the various PSSA/P3HT multilayers in organic thin-film transistors, we find an excellent correlation between the determined interface morphology, structure and the device performance.
X-ray reflectivity; Buried interface morphology; Organic thin film transistor; Grazing incidence X-ray diffraction; Atomic force microscopy; Mobility enhancement
Imaging ultra thin layers with helium ion microscopy: Utilizing the channeling contrast mechanism
Mocking, Tijs F
van Gastel, Raoul
Zandvliet, Harold J W
Beilstein Journal of Nanotechnology
Background: Helium ion microscopy is a new high-performance alternative to classical scanning electron microscopy. It provides superior resolution and high surface sensitivity by using secondary electrons.
Results: We report on a new contrast mechanism that extends the high surface sensitivity that is usually achieved in secondary electron images, to backscattered helium images. We demonstrate how thin organic and inorganic layers as well as self-assembled monolayers can be visualized on heavier element substrates by changes in the backscatter yield. Thin layers of light elements on heavy substrates should have a negligible direct influence on backscatter yields. However, using simple geometric calculations of the opaque crystal fraction, the contrast that is observed in the images can be interpreted in terms of changes in the channeling probability.
Conclusion: The suppression of ion channeling into crystalline matter by adsorbed thin films provides a new contrast mechanism for HIM. This dechanneling contrast is particularly well suited for the visualization of ultrathin layers of light elements on heavier substrates. Our results also highlight the importance of proper vacuum conditions for channeling-based experimental methods.
channeling; contrast mechanism; helium ion microscopy; ion scattering; thin layers
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