The diffractograms in Figure confirm the expected crystalline phase in all the samples under study, i.e., monoclinic phase in the samples synthesized at 160°C and orthorhombic phase in those synthesized at 180°C and 200°C [
20].
The bright field scanning transmission electron microscopy (STEM) images shown in Figure confirm the morphology of the resulting nanostructures. As expected, different nanostructures were obtained. The samples synthesized at 160°C show a nanoribbon-like morphology (Figure a), while samples synthesized at 180°C and 200°C present, respectively, nanowire-like (Figure b) and nanorod-like (Figure c) morphologies [
20].
SEGFET devices have been used as an alternative to conventional ISFET to isolate FET from analytical chemical environments and have presented the same operational characteristics [
4,
6,
9,
18]. The robustness and flexibility of the gate in SEGFET devices allow for the combination and testing of new materials that can sense pH easily. In addition, the commercial high-input impedance device (FET part) in SEGFET sensors can be reused, since only the extended gate membrane has to be built [
4,
6,
9,
18].
The 1D V2O5·nH2O nanostructures deposited on Au-coated substrates were immersed in buffer solutions with different pH (pH from 2 to 12), and the output voltage of the operational amplifier was recorded over time. Figure a shows the dynamic response of all 1D V2O5·nH2O nanostructures to pH variations. Despite the structural changes due to the conditions of hydrothermal synthesis, the V2O5·nH2O synthesized at 160°C (in nanoribbon form with monoclinic phase) and at 180°C (in nanowire form with orthorhombic phase) yielded similar results. The pH sensitivity of the 1D V2O5·nH2O nanostructures was determined based on the output voltage at 3 min. Within the limits of experimental error, the sensitivity did not change in any of the V2O5·nH2O morphologies, indicating that the pH sensitivity is independent of the phase or nanostructure, as indicated in the inset in Figure b.
The mechanism of pH sensitivity is due to the amphoteric properties of the majority of metal oxides and can be explained by the well-known site-binding model [
21,
22]. According to this model, the surface of V
2O
5·
nH
2O nanostructures contains three sites, i.e., negatively charged groups, neutral groups and positively charged groups. The total surface charge can be altered by the formation of metal complexes on the surface of V
2O
5·
nH
2O nanostructures according to the following equation [
21,
22]:
where pHpzc is the pH value at the point of zero charge, q is the elementary charge, k is the Boltzmann constant, T is the absolute temperature, and β is a factor that reflects the chemical sensitivity of the gate material. Modifications in the pH of the electrolyte cause changes in the concentration of protons, allowing for control of the output signal of SEGFET devices. The site-binding model is consistent with the experimental results, indicating that the value of β is the same for any V2O5·nH2O morphologies.
The pH sensitivity of 1D V
2O
5·
nH
2O nanostructures is consistent with the theoretical Nernstian value expected for pH-sensitive materials (59.2 mV.pH
^−1) and in excellent agreement with values reported for other metal oxide pH-sensing membranes [
6-
10]. In addition, due to this property, 1D V
2O
5·
nH
2O nanostructures can be applied as field-effect based biosensors, since the biomolecule-catalyzed reaction changes the ion concentration in solution, as suggested in the literature [
23].