The
hemocompatibility of La2O3-doped TiO2 films with different
concentration prepared by radio frequency (RF)
sputtering was studied. The microstructures and
blood compatibility of TiO2 films
were investigated by scan electron microscopy
(SEM), X-ray photoelectron spectroscopy (XPS),
and UV-visible optical absorption spectroscopy,
respectively. With the increasing of the
La2O3 concentrations, the
TiO2 films become smooth, and the
grain size becomes smaller. Meanwhile, the band
gap of the samples increases from 2.85 to
3.3
eV with increasing of the
La2O3 content in
TiO2 films from 0 to 3.64%.
La2O3-doped
TiO2 films exhibit n-type
semiconductor properties due to the existence of
Ti2+ and Ti3+. The
mechanism of hemocompatibility of
TiO2 film doped with
La2O3 was analyzed and
discussed.
eV with increasing of the
La2O3 content in
TiO2 films from 0 to 3.64%.
La2O3-doped
TiO2 films exhibit n-type
semiconductor properties due to the existence of
Ti2+ and Ti3+. The
mechanism of hemocompatibility of
TiO2 film doped with
La2O3 was analyzed and
discussed.

