The search of new materials to use in device technology is a never ending process. Discovery and study of new materials, whose properties can be tailored made constitute the core of development of solid state technology. In the last several decades, a remarkable increase in the application of amorphous materials has been made possible by constant innovations in the technology of their preparation. It is well understood that the mode of bonding of the elements in the structural network of amorphous materials is not strictly defined as in long-range ordered systems (crystals), so that the transport processes in these glassy materials are largely dependent on the nature and degree of short-range order [1
]. Therefore, the relationship between the structure and properties of glasses and conditions of their preparation is of special significance. The consequence of structural–technological modifications [2
], i.e., the possibility of adjusting the physico–chemical parameters on the basis of specially selected compositions and technological procedures of their preparation opens up new possibilities in the area of practical application of glassy materials.
Gallium selenide film is a III–VI layered semiconductor having a hexagonal close-packed structure. The primitive layer consists of four atomic planes in the sequence Se–Ga–Ga–Se. The bonding between primitive layers is due to Vander Waals force, while the interlayer bonds have a strong ionocovalent character. Therefore, the inter primitive layer bonding is much weaker than the intra primitive layer bonding. So, it is considered that the bonding property of GaSe film would strongly influence the growth of layered compound film. Due to outstanding nonlinear optical and electronic properties, it has been widely investigated during the last few years. Results on harmonic generation [3
], parametric oscillations, [6
], or frequency mixing [7
] in the near and middle IR, as well as effects related to excitonic optical nonlinearties giving rise to optical bistability [9
], are available in the literature. It has also potential applications for frequency doubling and fast optical gating [11
] and behaves as an X-ray detector [12
]. Electronic and optoelectronic properties of GaSe, GaS, and InSe materials indicate the possibilities of realizing phototrigger devices [13
] photodiodes and photoresistors [14
], and solar cells [15
The synthesis of one-dimensional nanostructures in form of nanobelts, nanorods, and nanowires has stimulated intense research activity due to their novel physical properties and their potential applications in nanotechnology [16
Recently, nanostructures of chalcogenides have been produced by several workers [21
] using different methods; therefore, this has become an interesting topic of research. It is expected that once these chalcogenides are produced as nanoscale, they will show a dramatic change in their optical and electronic properties due to reduction in size. However, studies on nano-chalcogenides are still at the beginning, and accordingly, overall features have not been discovered.
Understanding the electrical and optical processes in chalcogenide compounds such as GaSe at nanoscale is of interest both from fundamental and technological point of view. In recent years, owing to their very interesting physical properties, this particular material has raised considerable deal of research interest followed by technological applications in the field of micro/optoelectronics. Significant research efforts have been focused to the study of the electrical and optical properties of this compound in thin film formation. Since the optimization of device performance requires a well-established knowledge of the electrical and optical properties of GaSe thin films, in this paper, we report the results on electrical and optical measurements of amorphous thin films of GaSe nanorods prepared by vacuum evaporation technique.